진학프로석·박사 채용 접수 플랫폼

A Postdoctoral position is open in the CIMAP Laboratory dedicated to the study of niobium nitride phases through quantum and classical atomistic simulation.

NPOLAR Project context and goals

NPOLAR is an ANR funded project that aims at developing new kind of semiconductors using niobium nitride (NbN) materials. Semiconductors find uses in a wide variety of applications, either for lighting devices or telecommunication devices, and have known a very large development in the last 50 years. N‐polar GaN High Electron Mobility Transistors (HEMT) represent a promising field for high output power with excellent power added efficiency over a wide range of frequencies. One of the specificities of the use of NbN is that it allows for polarity inversion in the deposited layers, which is part of the excellent properties of the resulting transistors.

There are 4 main objectives to the project:

1. 1. First demonstration of reliable N‐Polar HEMTs
2. 2. Pioneering N‐Face GaN‐on‐Si for RF HEMTs
3. 3. Breakthrough Thermal Performance (≥20% Improvement)
4. 4. Fundamental Understanding of N‐Face Growth on NbN

Scientific objectives of the position

The position will be involved in objective number 4. The recruited candidate will have to run atomistic simulations of NbN phases and interfaces with other nitride materials (GaN, AlN) at the quantum and classical level. There will be two main goals to this study :

• • Help understanding the mechanics of the inversion of polarity when growing other nitride materials on NbN
• • Develop a classical model that can represent NbN materials properties as well as their interactions with other materials

These computation will mostly be done using software such as Quantum Espresso, VASP, LAMMPS and/or Gromacs.