진학프로석·박사 채용 접수 플랫폼

Neuromorphic systems hold great promise for reducing power consumption and for creating new applications beyond the reach of conventional computers. To date, each artificial neuron is composed of thousands of transistors. The use of Mott insulators, a class of materials with fascinating non-linear properties, could significantly reduce the complexity of the circuit, reducing the number of components per neuron and per synapse to one. 

The present project aims at developing an accessible circuit writing, by scanning a polarized conductive nanoscale tip. This has already been demonstrated by scanning tunnelling microscopy (STM), and could also be achieved using an atomic force microscope equipped with a conductive tip (C-AFM). A good understanding and control of the electro-induced transitions in Mott materials (GaTa4Se8 or TaS2 crystals, V2O3 or TaSe2 films) will be first developed. The objective of the project is the realization of a complete monolithic neuromorphic circuits by electric pulse on the surface of Mott materials. An exploratory project on superconducting circuits written at the surface of GaTa4Se8 may also be targeted depending on the candidate expertise. 

The fellowship is founded by the CPER IMITECH.